Directed Self-assembly for Ever-smaller Printed Circuits
:[ May 6th, 2013Field effect transistors (FETs) composed of discrete silicon active regions or ‘fins’, referred to as finFETs, have superior electrostatic properties compared to planar devices As a result, they are likely to play a role in further miniaturization of electronic devices. However, density requirements for fin patterning have exceeded what can be achieved through direct printing by 193nm immersion (193i) lithography. Consequently, sublithographic patterning techniques that can extend the resolution of 193i to the sub-80nm pitch regime are now of vital importance. [SPIE News, 5 Apr 2013]
